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| Radar Pulsed Power Transistor, 300 Watts, 1.20-1.40 GHz, 150 S Pulse, 10% Duty 12/06/01 Rev. 0 PH1214-300M Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package Outline Drawing Absolute Maximum Ratings @ 25 C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation @ +45 C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT TSTG Tj Rating 90 3.0 21.0 620 -65 to +200 200 Units V V A W C C Electrical Characteristics @ 25 C Parameter Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Thermal Resistance Output Power Power Gain Collector Efficiency Input Return Loss Load Mismatch Tolerance Load Mismatch Stability Symbol BVCES ICES RTH(JC) PO GP Min. 90 300 8.75 50 10 Max. 10 .25 2:1 1.5:1 Units V mA C/W W dB % dB IC=80 mA VCE=40 V VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz Test Conditions RL VSWR-T VSWR-S Radar Pulsed Power Transistor, 300 Watts, 1.20-1.40 GHz, 150S Pulse, 10% Duty PH1214-300M 12/06/01 Sample Test Data (Broadband test fixture matched to 50 .) P1dB Overdrive Freq. (GHz) Pin (W) Pout (W) Gain (dB) Gain (dB) Eff. (%) Ic (A) Droop (dB) RL (dB) Pout (W) 451 Po (dB) 0.46 Gain (dB) 9.52 Droop (dB) 0.38 Eff. (%) 59.8 Rev. 0 VSWR-S 1.5:1 2:1 2.5:1 1.2 40 406 10.06 63.2 16.1 0.1 18 S S S 1.3 40 355 9.48 0.82 59.3 15 0.04 15 412 0.65 9.12 0.32 58.2 S S S 1.4 40 335.8 9.24 58.4 14.4 0.06 16 378 0.51 8.75 0.35 56 S S S Note: Po(dB) is the difference between Pout at 1dB overdrive and Pout at Pin = 40W. Power Output Curves PH1214-300M Pout vs. Pin 500 400 Pout (W) 300 1.2 GHz 1.3 GHz 1.4 GHz 200 100 0 0 10 20 30 40 50 60 Pin (W) 2 Radar Pulsed Power Transistor, 300 Watts, 1.20-1.40 GHz, 150S Pulse, 10% Duty PH1214-300M 12/06/01 Test Fixture Impedances Rev. 0 Test Fixture Circuit Dimensions 3 Radar Pulsed Power Transistor, 300 Watts, 1.20-1.40 GHz, 150S Pulse, 10% Duty PH1214-300M 12/06/01 Rev. 0 Test Fixture Assembly Specifications subject to change without notice. North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 4 |
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